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SPECIFICATIONS:
Capacity
3.84TB
Interface
PCIe Express Gen4 x4, NVMe 1.4
NAND Flash Memory
Samsung V-NAND TLC
Form Factor
2.5 inch U.2
Sequential Read
6,900 MB/s
Sequential Write
4,100 MB/s
4KB Ran. Read (QD32)
1,000 KIOPS
4KB Ran. Write (QD32)
180 KIOPS
Idle
3.5 W
Active (Avg.)
11.0/13.5W
Operating
0°C to 70°C
Non-Operating
-40°C to 85°C
Humidity
5% to 95% non-condensing
MTBF
2.0 million hours
TBW
7,008TB
Supporting Features
TRIM (Required OS support), Garbage Collection, S.M.A.R.T
Data Security
AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive(IEEE1667)
